IndiumV3, Main, Repository, bibRecord, 000653

Processing of photonic crystals in InP membranes by focused ion beam milling and plasma etching : Nanoscale Imaging, Fabrication and Materials Modifications using Ion Beams

Identifieur interne : 000653 ( Main/Repository ); précédent : 000652; suivant : 000654

Processing of photonic crystals in InP membranes by focused ion beam milling and plasma etching : Nanoscale Imaging, Fabrication and Materials Modifications using Ion Beams

Auteurs : RBID : Pascal:13-0021831

Descripteurs français

Pascal (Inist)
- Traitement matériau, Membrane, Technologie faisceau ion focalisé, Gravure plasma, Nanophotonique, Optique intégrée, Gravure faisceau ionique, Lithographie faisceau ion, Gravure ionique réactive, Vitesse déplacement, Optimisation, Structure cristalline, Micromachine, Cristal photonique, Phosphure d'indium, Composé binaire, Oxyde de silicium, Dispositif microélectromécanique, Fabrication microélectronique, 4270Q, 6146, 8540H, InP, SiO2.

English descriptors

KwdEn :
- Binary compound, Crystalline structure, Focused ion beam technology, Indium phosphide, Integrated optics, Ion beam etching, Ion beam lithography, Material processing, Membrane, Microelectromechanical device, Microelectronic fabrication, Micromachine, Nanophotonics, Optimization, Photonic crystal, Plasma etching, Reactive ion etching, Silicon oxides, Speed.

Abstract

We present a fabrication approach for photonic crystals and similar nanophotonic structures in InP using focused ion beam milling and plasma etching. The high quality of ion milling lithography in a dielectric hardmask is combined with reactive ion etching to obtain simultaneously fast processing speeds as well as smooth and vertical sidewalls. Different hardmask materials have been investigated yielding very good results for SiO₂ and Si_xN_y. Parameters for the optimization of lithography and plasma etching are given. Finally, results of a released InP membrane with a photonic crystal structure featuring elliptical base elements are presented.

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Pascal:13-0021831

Le document en format XML

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<author><name sortKey="Kusserow, Thomas" uniqKey="Kusserow T">Thomas Kusserow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Nanostructure Technologies and Analytics (INA) and CINSaT, Heinrich-Plett-Str. 40, 34132 Kassel, University of Kassel</s1>
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<country>Allemagne</country>
<wicri:noRegion>University of Kassel</wicri:noRegion>
<wicri:noRegion>Institute of Nanostructure Technologies and Analytics (INA) and CINSaT, Heinrich-Plett-Str. 40, 34132 Kassel, University of Kassel</wicri:noRegion>
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<author><name sortKey="Wulf, Matthias" uniqKey="Wulf M">Matthias Wulf</name>
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<country>Pays-Bas</country>
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<author><name sortKey="Zamora, Ricardo" uniqKey="Zamora R">Ricardo Zamora</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Nanostructure Technologies and Analytics (INA) and CINSaT, Heinrich-Plett-Str. 40, 34132 Kassel, University of Kassel</s1>
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<author><name sortKey="Kanwar, Kelash" uniqKey="Kanwar K">Kelash Kanwar</name>
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<author><name sortKey="Hillmer, Hartmut" uniqKey="Hillmer H">Hartmut Hillmer</name>
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<term>Integrated optics</term>
<term>Ion beam etching</term>
<term>Ion beam lithography</term>
<term>Material processing</term>
<term>Membrane</term>
<term>Microelectromechanical device</term>
<term>Microelectronic fabrication</term>
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<term>Nanophotonics</term>
<term>Optimization</term>
<term>Photonic crystal</term>
<term>Plasma etching</term>
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<term>Silicon oxides</term>
<term>Speed</term>
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<term>Technologie faisceau ion focalisé</term>
<term>Gravure plasma</term>
<term>Nanophotonique</term>
<term>Optique intégrée</term>
<term>Gravure faisceau ionique</term>
<term>Lithographie faisceau ion</term>
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<term>Vitesse déplacement</term>
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<term>Cristal photonique</term>
<term>Phosphure d'indium</term>
<term>Composé binaire</term>
<term>Oxyde de silicium</term>
<term>Dispositif microélectromécanique</term>
<term>Fabrication microélectronique</term>
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<front><div type="abstract" xml:lang="en">We present a fabrication approach for photonic crystals and similar nanophotonic structures in InP using focused ion beam milling and plasma etching. The high quality of ion milling lithography in a dielectric hardmask is combined with reactive ion etching to obtain simultaneously fast processing speeds as well as smooth and vertical sidewalls. Different hardmask materials have been investigated yielding very good results for SiO<sub>2</sub>
 and Si<sub>x</sub>
N<sub>y</sub>
. Parameters for the optimization of lithography and plasma etching are given. Finally, results of a released InP membrane with a photonic crystal structure featuring elliptical base elements are presented.</div>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Conference on Materials for Advanced Technologies ( ICMAT) 2011</s1>
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Processing of photonic crystals in InP membranes by focused ion beam milling and plasma etching : Nanoscale Imaging, Fabrication and Materials Modifications using Ion Beams

Processing of photonic crystals in InP membranes by focused ion beam milling and plasma etching : Nanoscale Imaging, Fabrication and Materials Modifications using Ion Beams

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